The manuscript is currently under review at Advanced Electronic Materials.

Title: Nonvolatile Electrochemical Random-Access Memory Under Short Circuit

Author: Diana Kim, Virgil Watkins, Laszlo Cline, Jingxian Li, Kai Sun, Joshua D. Sugar, Elliot J. Fuller, A. Alec Talin, Yiyang Li

Affiliations: University of Michigan, Ann Arbor, MI, USA; Sandia National Laboratories, Livermore, CA, USA

#Corresponding author: yiyangli@umich.edu

Keywords: In-memory computing, retention, tungsten oxide, oxygen vacancies

The data for Fig. 2b and Fig. 3 are in the two files titled. One file is for potentiation, while the other file is for depression data.

"1hr_depression_24hr_hold.csv" and "2hr_potentiation_24_hr_hold.csv"

The data for Fig. 2a are in "multilevel.csv"

The data for Fig. 1b is in "analog_states.csv"

The data for Fig. 1c is in "temperature.csv"

The data for FIg. 2c is in "retention.csv"