Coating with 250 nm thick SiO2 layer (1)

Notes:

Sectioned samples were coated with a 250 nm thick SiO2 layer using a Kurt J. Lesker Co. five source confocal, magnetron sputtering system.

Oxidation Exposure - 2 h (1)

Temperature:

800 C

Cooling Rate:

No value

Cooling Type:

{ "name": "Gas Cooled", "value": "gas_cooled" }

Time:

2 h

Oxidation Exposure - 32 h (1)

Cooling Type:

{ "name": "Gas Cooled", "value": "gas_cooled" }

Temperature:

800 C

Cooling Rate:

No value

Time:

32 h

STEM - EDS (2)

Voltage:

200 kV

Spot Size:

No value

Camera Length:

No value

Mode:

{ "name": "Diffraction Imaging", "value": "diffraction_imaging" }

Apparatus:

No value

Scanning:

No value

Conventional Scanning:

No value

Stage:

No value

Files

• EDS Mapping - Pure Ti, 250 nm SiO2, 2h, 800C.ipj
• EDS Mapping - Pure Ti, 250 nm SiO2, 32h, 800C.ipj
• EDS Mapping 1 - Pure Ti, 250 nm SiO2, 2h, 800C - O Map.tif
  
• EDS Mapping 1 - Pure Ti, 250 nm SiO2, 2h, 800C - Si Map.tif
  
• EDS Mapping 1 - Pure Ti, 250 nm SiO2, 2h, 800C - Ti Map.tif
  
• EDS Mapping 1 - Pure Ti, 250 nm SiO2, 32h, 800C - O Map.tif
  
• EDS Mapping 1 - Pure Ti, 250 nm SiO2, 32h, 800C - Si Map.tif
  
• EDS Mapping 1 - Pure Ti, 250 nm SiO2, 32h, 800C - Ti Map.tif
  
• EDS Mapping 2 - Pure Ti, 250 nm SiO2, 2h, 800C - O Map.tif
  
• EDS Mapping 2 - Pure Ti, 250 nm SiO2, 2h, 800C - Si Map.tif
  
• EDS Mapping 2 - Pure Ti, 250 nm SiO2, 2h, 800C - Ti Map.tif
  
See 12 more files......

TEM (1)

Stage:

No value

Voltage:

200 kV

Spot Size:

No value

Mode:

{ "name": "Diffraction Imaging", "value": "diffraction_imaging" }

Scanning:

No value

Apparatus:

No value

Conventional Scanning:

No value

Camera Length:

No value

Files

• Electron diffraction pattern - Pure Ti, 250 nm SiO2, 2h, 800C - Ti5Si3 and Alpha Ti.tif