Sample: 250 nm SiO2 coated titanium plate Ungroup Processes
Coating with 250 nm thick SiO2 layer (1)
Settings
Notes:
Sectioned samples were coated with a 250 nm thick SiO2 layer using a Kurt J. Lesker Co. five source confocal, magnetron sputtering system.
Oxidation Exposure - 2 h (1)
Settings
Temperature:
800
C
Cooling Rate:
No value
Cooling Type:
{
"name": "Gas Cooled",
"value": "gas_cooled"
}
Time:
2
h
Oxidation Exposure - 32 h (1)
Settings
Cooling Type:
{
"name": "Gas Cooled",
"value": "gas_cooled"
}
Temperature:
800
C
Cooling Rate:
No value
Time:
32
h
STEM - EDS (2)
Settings
Voltage:
200
kV
Spot Size:
No value
Camera Length:
No value
Mode:
{
"name": "Diffraction Imaging",
"value": "diffraction_imaging"
}
Apparatus:
No value
Scanning:
No value
Conventional Scanning:
No value
Stage:
No value
Files
- EDS Mapping - Pure Ti, 250 nm SiO2, 2h, 800C.ipj
- EDS Mapping - Pure Ti, 250 nm SiO2, 32h, 800C.ipj
-
EDS Mapping 1 - Pure Ti, 250 nm SiO2, 2h, 800C - O Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm SiO2, 2h, 800C - Si Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm SiO2, 2h, 800C - Ti Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm SiO2, 32h, 800C - O Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm SiO2, 32h, 800C - Si Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm SiO2, 32h, 800C - Ti Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm SiO2, 2h, 800C - O Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm SiO2, 2h, 800C - Si Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm SiO2, 2h, 800C - Ti Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm SiO2, 32h, 800C - O Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm SiO2, 32h, 800C - Si Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm SiO2, 32h, 800C - Ti Map.tif
-
EDS Mapping 3 - Pure Ti, 250 nm SiO2, 32h, 800C - O Map.tif
-
EDS Mapping 3 - Pure Ti, 250 nm SiO2, 32h, 800C - Si Map.tif
-
EDS Mapping 3 - Pure Ti, 250 nm SiO2, 32h, 800C - Ti Map.tif
-
STEM diffraction-contrast - Pure Ti, 250 nm SiO2, 2h, 800C - for EDS Mapping 1.tif
-
STEM diffraction-contrast - Pure Ti, 250 nm SiO2, 2h, 800C - for EDS Mapping 2.tif
-
STEM Z-contrast - Pure Ti, 250 nm SiO2, 32h, 800C - for EDS Mapping 1.tif
-
STEM Z-contrast - Pure Ti, 250 nm SiO2, 32h, 800C - for EDS Mapping 2.tif
-
STEM Z-contrast - Pure Ti, 250 nm SiO2, 32h, 800C - for EDS Mapping 3.tif
-
STEM Z-contrast - Pure Ti, 250 nm SiO2, 32h, 800C.tif
TEM (1)
Settings
Stage:
No value
Voltage:
200
kV
Spot Size:
No value
Mode:
{
"name": "Diffraction Imaging",
"value": "diffraction_imaging"
}
Scanning:
No value
Apparatus:
No value
Conventional Scanning:
No value
Camera Length:
No value