Sample: 250 nm Si coated titanium plate Ungroup Processes
Last Updated: 4 years ago Owner: Kathleen Chou ID: 6889
APT (1)
Pressure:
No value
Specimen Temperature:
50 K
Imaging Gas:
{ "name": "None", "value": "none" }
Laser Wavelength:
No value nm
Mode:
{ "name": "Laser", "value": "laser" }
Pulse Frequency:
250 kHz
Evaporation Control:
No value
Evaporation Rate:
0.005 Atom/Pulse
Laser Pulse Energy:
30 pJ
Voltage Pulse Fraction:
0.5 percentage
Files
Coating with 250 nm thick pure Si layer (1)
Notes:
Sectioned samples were coated with a 250 nm thick pure Si layer using a Kurt J. Lesker Co. five source confocal, magnetron sputtering system.
Oxidation Exposure - 2 h (1)
Time:
2 h
Cooling Type:
{ "name": "Gas Cooled", "value": "gas_cooled" }
Temperature:
800 C
Cooling Rate:
No value
Oxidation Exposure - 32 h (1)
Time:
32 h
Temperature:
800 C
Cooling Type:
{ "name": "Gas Cooled", "value": "gas_cooled" }
Cooling Rate:
No value
Oxidation Exposure - 64 h (1)
Temperature:
800 C
Time:
64 h
Cooling Type:
{ "name": "Gas Cooled", "value": "gas_cooled" }
Cooling Rate:
No value
Oxidation Exposure - 8 h (1)
Cooling Rate:
No value
Time:
8 h
Cooling Type:
{ "name": "Gas Cooled", "value": "gas_cooled" }
Temperature:
800 C
SEM (4)
Specimen/Stage Bias:
No value V
Detector:
No value
Current:
0.4 nA
Voltage:
5 kV
Magnification:
15000
Working Distance:
4 mm
Stage Tilt:
-1 degrees
Stage:
No value
Stage Tilt:
No value degrees
Stage Tilt:
20 degrees
Files
STEM - EDS (4)
Mode:
{ "name": "Diffraction Imaging", "value": "diffraction_imaging" }
Voltage:
200 kV
Conventional Scanning:
No value
Spot Size:
No value
Stage:
No value
Scanning:
No value
Apparatus:
Hitachi 2300A
Camera Length:
No value
Mode:
{ "name": "Scanning z-contrast", "value": "scanning_z_contrast" }
Apparatus:
No value
Files
TEM (4)
Apparatus:
No value
Camera Length:
No value
Scanning:
No value
Conventional Scanning:
No value
Spot Size:
No value
Mode:
{ "name": "Diffraction Imaging", "value": "diffraction_imaging" }
Voltage:
200 kV
Stage:
No value
Files