Sample: 250 nm Si coated titanium plate Ungroup Processes
APT (1)
Settings
Pressure:
No value
Specimen Temperature:
50
K
Imaging Gas:
{
"name": "None",
"value": "none"
}
Laser Wavelength:
No value
nm
Mode:
{
"name": "Laser",
"value": "laser"
}
Pulse Frequency:
250
kHz
Evaporation Control:
No value
Evaporation Rate:
0.005
Atom/Pulse
Laser Pulse Energy:
30
pJ
Voltage Pulse Fraction:
0.5
percentage
Files
Coating with 250 nm thick pure Si layer (1)
Settings
Notes:
Sectioned samples were coated with a 250 nm thick pure Si layer using a Kurt J. Lesker Co. five source confocal, magnetron sputtering system.
Oxidation Exposure - 2 h (1)
Settings
Time:
2
h
Cooling Type:
{
"name": "Gas Cooled",
"value": "gas_cooled"
}
Temperature:
800
C
Cooling Rate:
No value
Oxidation Exposure - 32 h (1)
Settings
Time:
32
h
Temperature:
800
C
Cooling Type:
{
"name": "Gas Cooled",
"value": "gas_cooled"
}
Cooling Rate:
No value
Oxidation Exposure - 64 h (1)
Settings
Temperature:
800
C
Time:
64
h
Cooling Type:
{
"name": "Gas Cooled",
"value": "gas_cooled"
}
Cooling Rate:
No value
Oxidation Exposure - 8 h (1)
Settings
Cooling Rate:
No value
Time:
8
h
Cooling Type:
{
"name": "Gas Cooled",
"value": "gas_cooled"
}
Temperature:
800
C
SEM (4)
Settings
Specimen/Stage Bias:
No value
V
Detector:
No value
Current:
0.4
nA
Voltage:
5
kV
Magnification:
15000
Working Distance:
4
mm
Stage Tilt:
-1
degrees
Stage:
No value
Stage Tilt:
No value
degrees
Stage Tilt:
20
degrees
Files
-
SEM - Pure Ti, 250 nm Si, 2 h 800C Surface 1.5kx - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 2 h 800C Surface 1.5kx - Scale bar.tif
-
SEM - Pure Ti, 250 nm Si, 2 h 800C Surface 15k - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 2 h 800C Surface 15k - Scale bar.tif
-
SEM - Pure Ti, 250 nm Si, 32 h 800C Surface 1.5kx - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 32 h 800C Surface 1.5kx - Scale bar.tif
-
SEM - Pure Ti, 250 nm Si, 32 h 800C Surface 15kx - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 32 h 800C Surface 15kx - Scale bar.tif
-
SEM - Pure Ti, 250 nm Si, 64 h 800C Surface 1.5kx - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 64 h 800C Surface 1.5kx - Scale bar.tif
-
SEM - Pure Ti, 250 nm Si, 64 h 800C Surface 15kx, 20degtilt - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 64 h 800C Surface 15kx, 20degtilt - Scale bar.tif
-
SEM - Pure Ti, 250 nm Si, 8 h 800C Surface 1.5kx - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 8 h 800C Surface 1.5kx - Scale bar.tif
-
SEM - Pure Ti, 250 nm Si, 8 h 800C Surface 15kx - Raw.tif
-
SEM - Pure Ti, 250 nm Si, 8 h 800C Surface 15kx - Scale bar.tif
STEM - EDS (4)
Settings
Mode:
{
"name": "Diffraction Imaging",
"value": "diffraction_imaging"
}
Voltage:
200
kV
Conventional Scanning:
No value
Spot Size:
No value
Stage:
No value
Scanning:
No value
Apparatus:
Hitachi 2300A
Camera Length:
No value
Mode:
{
"name": "Scanning z-contrast",
"value": "scanning_z_contrast"
}
Apparatus:
No value
Files
- EDS Mapping - Pure Ti, 250 nm Si, 2h, 800C.ipj
- EDS Mapping - Pure Ti, 250 nm Si, 64h, 800C.ipj
- EDS Mapping - Pure Ti, 250 nm Si, 8h, 800C.ipj
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 2h, 800C - O Map.png
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 2h, 800C - Si Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 2h, 800C - Ti Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 32h, 800C - O Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 32h, 800C - Si Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 32h, 800C - Ti Map.tif
- EDS Mapping 1 - Pure Ti, 250 nm Si, 32h, 800C.ipj
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 64h, 800C - O Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 64h, 800C - Si Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 64h, 800C - Ti Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 8 h, 800C - O Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 8 h, 800C - Si Map.tif
-
EDS Mapping 1 - Pure Ti, 250 nm Si, 8 h, 800C - Ti Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 2h, 800C - Ga Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 2h, 800C - O Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 2h, 800C - Si Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 2h, 800C - Ti Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 32h, 800C - O Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 32h, 800C - Si Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 32h, 800C - Ti Map.tif
- EDS Mapping 2 - Pure Ti, 250 nm Si, 32h, 800C.ipj
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 64h, 800C - O Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 64h, 800C - Si Map.tif
-
EDS Mapping 2 - Pure Ti, 250 nm Si, 64h, 800C - Ti Map.tif
-
STEM Z-contrast - Pure Ti, 250 nm Si, 2h, 800C - for EDS Mapping 1.tif
-
STEM Z-contrast - Pure Ti, 250 nm Si, 2h, 800C - for EDS Mapping 2.tif
-
STEM Z-contrast - Pure Ti, 250 nm Si, 32h, 800C - for EDS Mapping 1.tif
-
STEM Z-contrast - Pure Ti, 250 nm Si, 32h, 800C - for EDS Mapping 2.tif
-
STEM Z-contrast - Pure Ti, 250 nm Si, 64h, 800C - for EDS Mapping 1.TIF
-
STEM Z-contrast - Pure Ti, 250 nm Si, 64h, 800C - for EDS Mapping 2.TIF
-
STEM Z-contrast - Pure Ti, 250 nm Si, 64h, 800C.tif
-
STEM Z-contrast - Pure Ti, 250 nm Si, 8h, 800C - for EDS Mapping 1 - Raw.TIF
-
STEM Z-contrast - Pure Ti, 250 nm Si, 8h, 800C - for EDS Mapping 1.tif
TEM (4)
Settings
Apparatus:
No value
Camera Length:
No value
Scanning:
No value
Conventional Scanning:
No value
Spot Size:
No value
Mode:
{
"name": "Diffraction Imaging",
"value": "diffraction_imaging"
}
Voltage:
200
kV
Stage:
No value
Files
-
Bright field TEM - Pure Ti, 250 nm Si, 2h, 800C.tif
-
Bright field TEM - Pure Ti, 250 nm Si, 32h, 800C.tif
-
Bright field TEM - Pure Ti, 250 nm Si, 64h, 800C.tif
-
Bright field TEM - Pure Ti, 250 nm Si, 8h, 800C.tif
-
Electron diffraction pattern - Pure Ti, 250 nm Si, 2h, 800C - Ti5Si3.tif
-
Electron diffraction pattern - Pure Ti, 250 nm Si, 8 h, 800C - External oxide layer, Rutile TiO2.tif
-
Electron diffraction pattern - Pure Ti, 250 nm Si, 8 h, 800C - Internal oxide layer, Rutile TiO2.tif
-
Location for selected area electron diffraction - Pure Ti, 250 nm Si, 2h, 800C.tif