50 nm Si Deposition and Oxidation Isothermal Exposure - 2h (1)

Time:

2 h

Cooling Type:

{ "name": "Gas Cooled", "value": "gas_cooled" }

Temperature:

800 C

Cooling Rate:

No value

Hardness Profiles (1)

Load:

0.001 N

Type:

No value

Dwell Time:

2 s

Files

• Nanoindentation Hardness Profiles - Pure Ti and Oxidized Ti Samples with and without Si coating.tif
  

Sectioning (1)

Notes:

Sectioned output samples using slow speed diamond saw

SEM (1)

Current:

0.4 nA

Specimen/Stage Bias:

No value V

Stage Tilt:

No value degrees

Detector:

{ "name": "Secondary", "value": "secondary" }

Working Distance:

5 mm

Magnification:

15000

Stage:

{ "name": "Standard", "value": "standard" }

Voltage:

5 kV

Files

• SEM - Surface Oxide - Pure Ti, 50 nm Si, 2 hour oxidation, 800C, 20% O2 - 15kx - 11-3-2016.tif
  

STEM EDS (1)

Camera Length:

No value

Spot Size:

No value

Mode:

{ "name": "Scanning z-contrast", "value": "scanning_z_contrast" }

Conventional Scanning:

{ "name": "Yes", "value": "yes" }

Apparatus:

Hitachi HD-2300

Voltage:

200 kV

Stage:

{ "name": "Standard", "value": "standard" }

Scanning:

No value

Files

• STEM EDS - Pure Ti, 50 nm Si, 2 hr oxidation, 800C, 20% O2 - O EDS Map.tif
  
• STEM EDS - Pure Ti, 50 nm Si, 2 hr oxidation, 800C, 20% O2 - Pt EDS Map.tif
  
• STEM EDS - Pure Ti, 50 nm Si, 2 hr oxidation, 800C, 20% O2 - Si EDS Map.tif
  
• STEM EDS - Pure Ti, 50 nm Si, 2 hr oxidation, 800C, 20% O2 - Ti EDS Map.tif
  
• STEM Z Contrast - Pure Ti, 50 nm Si, 2 hour oxidation, 800C, 20% O2 -50 kx.TIF
  

TEM (1)

Stage:

{ "name": "Standard", "value": "standard" }

Apparatus:

JEOL 2010F AEM

Scanning:

{ "name": "Bright Field", "value": "bright_field" }

Voltage:

200 kV

Spot Size:

No value

Mode:

{ "name": "Diffraction Imaging", "value": "diffraction_imaging" }

Conventional Scanning:

{ "name": "Yes", "value": "yes" }

Camera Length:

No value

Files

• Bright Field TEM - Pure Ti, 50 nm Si, 2 hour oxidation, 800C, 20% O2 -11-10-2016.tif