Colloidal Silica Deposition and Oxidation Isothermal Exposure - 2h (1)

Cooling Rate:

No value

Cooling Type:

{ "name": "Gas Cooled", "value": "gas_cooled" }

Time:

2 h

Temperature:

800 C

Sectioning (1)

Notes:

Sectioned output samples using slow speed diamond saw

STEM EDS (1)

Stage:

{ "name": "Standard", "value": "standard" }

Conventional Scanning:

{ "name": "Yes", "value": "yes" }

Mode:

{ "name": "Scanning z-contrast", "value": "scanning_z_contrast" }

Scanning:

No value

Spot Size:

No value

Camera Length:

No value

Apparatus:

Hitachi HD-2300

Voltage:

200 kV

Files

• STEM EDS - Pure Ti, Colloidal Silica, 2 hour oxidation, 800C, 20% O2 - O EDS Map.tif
  
• STEM EDS - Pure Ti, Colloidal Silica, 2 hour oxidation, 800C, 20% O2 - Pt EDS Map.tif
  
• STEM EDS - Pure Ti, Colloidal Silica, 2 hour oxidation, 800C, 20% O2 - Si EDS Map.tif
  
• STEM EDS - Pure Ti, Colloidal Silica, 2 hour oxidation, 800C, 20% O2 - Ti EDS Map.tif
  
• STEM Z Contrast- Pure Ti, Colloidal silica, 2 hr, 800C, 20% O2 - 25kx Location 3.TIF
  

TEM (1)

Mode:

{ "name": "Diffraction Imaging", "value": "diffraction_imaging" }

Spot Size:

No value

Scanning:

{ "name": "Bright Field", "value": "bright_field" }

Apparatus:

JEOL 2010F AEM

Stage:

{ "name": "Standard", "value": "standard" }

Camera Length:

No value

Conventional Scanning:

{ "name": "Yes", "value": "yes" }

Voltage:

200 kV

Files

• Bright Field TEM - Pure Ti, Colloidal Silica, 2 hour oxidation, 800C, 20% O2 - 12-13-2016.tif